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Simulation and design of InGaAsN-based heterojunction bipolar transistors for complementary low-power applications

机译：互补低功耗应用中基于InGaAsN的异质结双极晶体管的仿真和设计

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Solid State Electronics 44 (2000) 1515-1521. doi:10.1016/S0038-1101(00)00131-3

机译：固态电子学44（2000）1515-1521。 doi：10.1016 / S0038-1101（00）00131-3

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Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA ( host institution ); Monier, C; Chang, P.C; Li, N.Y; LaRoche, J.R; Baca, A.G; Hou, H.Q; Ren, F; Pearton, S.J;
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机译：SiGe异质结双极晶体管双极互补金属氧化物半导体工艺中使用二极管激活的SiGe异质结双极晶体管的低电容低电压瞬态电压抑制器
2. Small-scale InGaP/GaAs heterojunction bipolar transistors for high-speed and low-power integrated-circuit applications [J] . Tohru Oka, Koji Hirata, Hideyuki Suzuki, International Journal of High Speed Electronics and Systems: Devices, Integrated Circuits and Systems, Optical and Quantum Electronics . 2001,第1期

机译：适用于高速和低功耗集成电路应用的小型InGaP / GaAs异质结双极晶体管
3. Analysis of heterojunction bipolar transistor/resonant tunneling diode logic for low-power and high-speed digital applications [J] . Chang C.E., Asbeck P.M. IEEE Transactions on Electron Devices . 1993,第4期

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4. Design Optimization of InGaAsN-based Pnp Heterojunction Bipolar Transistors for Low-Power Applications [C] . C. Monier, P. C. Chang, A. G. Baca The Meeting of the Electrochemical Society . 2001

机译：基于IngaAsn的PNP异质结双极晶体管的设计优化
5. Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC): Double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT). [D] . Tan, Eugene. 1998

机译：基于N沟道InGaAsP-InP的倒置通道技术器件（ICT）的设计，制造和表征，用于光电集成电路（OEIC）：双异质结光电开关（DOES），异质结场效应晶体管（HFET），双极倒置沟道场-效应晶体管（BICFET）和双极型反向沟道光电晶体管（BICPT）。
6. A Novel Germanium-Around-Source Gate-All-Around Tunnelling Field-Effect Transistor for Low-Power Applications [O] . Ke Han, Shanglin Long, Zhongliang Deng, 2020

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7. Simulation and design of InGaAsN-based heterojunction bipolar transistors for complementary low-power applications [O] . Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA ( host institution ), Monier, C ( author ), Chang, P.C ( author ), 2000

机译：互补低功耗应用中基于InGaAsN的异质结双极晶体管的仿真和设计

Simulation and design of InGaAsN-based heterojunction bipolar transistors for complementary low-power applications

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